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XT0502,高频头

XT0502,高频头

产品详情

  国诚新特  型号 XT0502
 产品类型 标清  接收频道 950MHZ~~2150MHZ
 记忆数 1(个)  功耗 0.7(W)
 电源 DC-3.3V  产地 广东省深圳市
 材 金属外壳封装  电源电压 DC-3.3V(V)
 制式 DVB_S


    高频头XT0502国诚新特科技自主研发的产品,其做工材料均采用元器件,电路板做工精细,工整,性能良。为保XT0502高产出,先后投入五十多万资金于检测设备的开发,力保每个产品在出厂前,都经过三道检测,为做到真正的全检模式,每个产品均贴有条码,每个产品的各项性能参数均可查看。其在使用功能上可完全取代夏普原装BS2S7HZ0502A.  

 

 

   规格书如下:

DEVICE SPECIFICATION FOR XT0502

This specification covers L-band to I and Q base-band tuner intended for use in digital modulated satellite receiver(DVB-S).

[1] General specification

1-1 Receiving frequency range                 950MHz to 2150MHz

1-2 Input singal level per channel              -75dBm to -25dBm

1-3Nominal RF input impedance               75 ohm (F-connector)

1-4Local frequency range                     950 MHz to 2150MHz

1-5Channel Selection system                  PLL synthesizer(Clock:16MHz/4)

1-6 Local step frequency                      500kHz

1-7 AGC input voltage                        0V to 3.3V

                                            0V :

                                            3.3 : Min gain

 1-8 I/Q Output LPF cut off frequency(-3dB)       8MHz to 36MHz, variable(2 MHz step)

    1-9 Nominal I/Q output level                   0.5Vp-p at 1kohm load impedance

  1-10 Nominal I/Q output impedance             50ohm

  1-11 Operating Voltage                       B2,B4 3.3V± 0.15V  DC

1-12Absolute maximum rating voltage           B1A 25V DC, 400mA Max.

                                        B2,B4 -0.3~4.0V DC

                                        AGC,SDA,SCL -0.3~B2+0.3 V DC

1-13Circuit block diagram

    1-14Connection diagram

1-15 Mass                                   25g

1-16 Storage condition     Temperature          15 to 35

                         Humidity            25 %RH to 75 %RH

                        Period               6 months

 1-17  Environmental characteristics                   RoHS compliant

    (RoHS refers to the "DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND  OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.")

1-18  Attention items:

1) This unit contains components that can be damaged by electro-static discharge.

Before handling this unit, ground your hands, tools, working desks and equipment to

protect the unit from Electronic Static Destroy.

2) Avoid following actions;

a) to store this unit in the place of the high temperature and humidity.

b) to exe this unit to corrosive gases.

[2] Test condition

     2-1 Supply voltage                               B2,B4 3.3V ± 0.1V DC

2-2 Ambient temperature                          25℃ ± 5℃

     2-3 Ambient humidity                             65± 5

2-4 I/Q output level                               0.5Vp-p(at 1kohm load)

[3] Electrical specification                   (Testing Condition is showed from 2-1 to 2-4)

No

  ITEM             

            SPECIFICATION

CONDITION

                  MIN

TYP

MAX

UNIT

3-1

 

Noise Figure

 

9

20

dB

at AGC voltage=0V

3-2

RF input VSWR

 

2.0

2.5

 

950MHz to 2150MHz

3-3

 

Gain deviation

 

7

10

dB

950MHz to 2150MHz

3-4

AGC control range

72

78

 

dB

AGC voltage: 0 to 3.3V

3-5

3rdorder intermodulation(2 tone)

40

60

 

dB

input level is -25dBm

desired signal :

Fo undesired signal :

(Fo+29.5MHz,Fo+59MHz)or (Fo-29.5MHz,Fo-59MHz)

LPF_Fc=20MHz

3-6

 

I/Q phase balance

-4

0

+4

deg.

freq. offset is 100kHz

3-7

I/Q gain balance

-2

0

+2

dB

freq. offset is 100kHz

3-8

Pass band flatness of BB LPF

 

 

2

dB

0.1MHz to fc×0.7

3-9

Local oscillator signal leak at

RF input terminal

 

-68

-63

dBm

950 to 2150 MHz

3-10

Phase noise

1kHz offset

 

-70

-50

dBc/Hz

measured at I/Q out

10kHz offse

 

-78

-76

dBc/Hz

100kHz offset

 

-85

-78

dBc/Hz

3-11

Reference leak

 

-40

-30

dBc

measured at I/Q out

3-12

PLL lock up time

 

10

50

ms

within VT±5%

VT is tuning voltage

3-13

1st Oscillator frequency error

-500

 

500

kHz

-10 to +60

3-14

Current

consumption

B2      3.3V

 

200

215

mA

 

B4      3.3V

 

25

40

mA

AGC

 

±0.1

±1

mA

3-15

Clock out level

1.2

1.7

 

Vpp

high impedance(*1)

measured by FET probe

3-16

Clock out frequency error

-80

0

+80

ppm

-10to +60

3-17

RF output VSWR

 

2.0

2.5

 

950MHz to 2150MHz

measured at RF out

3-18

RF output gain

-5

0

+5

dB

 

 

 

 


封装脚位图如下:

 

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