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无锡固电ISC达林顿三极管MJ15003

无锡固电ISC达林顿三极管MJ15003

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 是否提供加工 是   ISC/ISCSEMI
 型号 MJ15003  应用范围 达林顿
 材料 硅(Si)  极性 NPN型
 结构 点接触型  封装形式 TO-3
 封装材料 金属封装

DESCRIPTION                                              

·High DC Current Gain-

  : hFE= 25(Min)@IC=

·Wide Area of Safe Operation

·Complement to Type MJ15004

APPLICATIONS

·Designed for high power audio,disk head itioners and

other linear applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

140

V

VCEO

Collector-Emitter Voltage

140

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous 

20

A

IB

Base Current-Continuous

5

A

IE

Emitter Current-Continuous 

-25

A

PD

Total Power Dissipation@TC=25℃

250

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

 

ELECTRICAL CHARACTERISTICS

Tj=25℃unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A ;IB= 0

140

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= ; IB= 0.

 

1

V

VBE(on)

Base-Emitter On Voltage

IC= ; VCE= 2V

 

2

V

ICEO

Collector Cutoff Current

VCE= 140V; IB= 0

 

0.25

mA

ICEX

Collector Cutoff Current

VCE= 140V; VBE(OFF)= 1.5V

VCE= 140V; VBE(OFF)= 1.5V;TC= 150℃

 

0.1

2.0

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

 

0.1

mA

hFE

DC Current Gain

IC= ; VCE= 2V

25

150

 

Is/b

Second Breakdown Collector Current with Base Forward Biased

VCE= 50V,t= 1s, Nonrepetitive

5

 

A

VCE= 100V,t= 1s, Nonrepetitive

1

COB

Output Capacitance

IE= 0 ; VCB= 10V;ftest= 1.0MHz

 

1000

pF

fT

Current-Gain—Bandwidth Product

IC= 0. ; VCE= 10V;ftest= 0.5MHz

2

 

MHz

 

 

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