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无锡固电ISC2SD560三极管

无锡固电ISC2SD560三极管

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 是否提供加工 是   isc
 型号 2SD560  应用范围 达林顿
 材料 硅(Si)  极性 NPN型
 结构 平面型  封装形式 直插型
 封装材料 塑料封装

供应2SD560三极管TO-220

DESCRIPTION                                             

·Collector-Emitter Sustaining Voltage-

  : VCEO(SUS)= 100V(Min)

·High DC Current Gain

  : hFE= 2000(Min) @IC= 3.0A

·Low Saturation Voltage

·Complement to Type 2SB601

 

APPLICATIONS

·Designed for low frequency power amplifiers and low speed

switching applications

  

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                      

150

V

VCEO

Collector-Emitter Voltage                         

100

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

5

A

ICP

Collector Current-Peak

8

A

IB

Base Current-Continuous 

0.5

A

PC

Collector Power Dissipation

@ Ta=25℃

1.5

W

Collector Power Dissipation

@ TC=25℃

30

TJ

JunctionTemperature

150

℃

Tstg

StorageTemperature Range

-55~150

℃

ELECTRICAL CHARACTERISTICS

TC=25℃unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 3A; L= 1mH,IB= 3mA

100

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 3A; IB= 3mA

 

 

1.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 3A; IB= 3mA

 

 

2.0

V

ICBO

Collector Cutoff Current

VCB= 100V; IE=0

 

 

1

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

 

 

3

mA

hFE-1

DC Current Gain

IC= 3A ; VCE= 2V

2000

 

15000

 

hFE-2

DC Current Gain

IC= ; VCE= 2V

500

 

 

 

Switching times

ton

Turn-on Time

IC= 3A , IB1= -IB2= 3mA

RL= 16.7Ω; VCC≈50V

 

0.5

 

μs

tstg

Storage Time

 

1.0

 

μs

tf

Fall Time

 

1.0

 

μs

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