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江苏无锡ISC功率晶体管2SD362KSD362

江苏无锡ISC功率晶体管2SD362KSD362

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  ISC/ISCSEMI  型号 2SD362R KSD362R
 应用范围 振荡  功率特性 大功率
 频率特性 中频  极性 NPN型
 结构 平面型  材料 硅(Si)
 封装形式 TO-220  封装材料 塑料封装

DESCRIPTION                                             

·Collector-Emitter Breakdown Voltage-

  : V(BR)CEO= 70V(Min)

·Collector Power Dissipation-

  : PC= 40W(Max)@ TC= 25℃

APPLICATIONS

·Designed for B/W TV horizontal deflection output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                      

150

V

VCEO

Collector-Emitter Voltage                         

70

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

5

A

PC

Collector Power Dissipation

@ TC=25℃

40

W

TJ

JunctionTemperature

150

℃

Tstg

StorageTemperature Range

-55~150

℃

ELECTRICAL CHARACTERISTICS

TC=25℃unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 2mA; RBE=∞

70

 

 

V

V(BR)CBO

Collector-BaseBreakdownVoltage                      

IC= 1mA; IE= 0

150

 

 

V

V(BR)EBO

Emitter-BaseBreakdownVoltage

IE= 1mA; IC= 0

8

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= ; IB= 0.

 

 

1.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= ; IB= 0.

 

 

1.5

V

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

 

 

20

μA

hFE

DC Current Gain

IC= ; VCE= 5V

20

 

140

 

fT

Current-Gain—Bandwidth Product

IC= 0.; VCE= 5V

 

10

 

MHz

 

u      hFEClassifications

N

R

O

20-50

40-80

70-140

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