氮化铝片（AlN）覆金属电路

北京海古德新技术有限公司成立于2008年11月，坐落于北京中关村科技园金桥科技产地。公司是一家具有自主的现代化高新技术生产企，致力于新型电子陶瓷材料及其元器件的生产和研发。核心产品氮化铝（AlN）陶瓷片是国家鼓励和重点支持的朝阳产，获得过国家创新金的支持，为国家火炬计划重点项目。氮化铝（AlN）陶瓷片具有良的热传导性、可靠的电绝缘性、低的介电常数和介损耗，是新一代LED照明、大规模集成电路、半导体模块电路及大功率器件理想的散热和封装材料。

（Established in 2008, Beijing Hygood New Technology Ltd. is located in Golden Bridge Science & Technology Industrial Base，Zhongguancun Technology Park. As a modern manufacturer owning independent intellectual property rights, Hygood is devoted to R&D and produce new electric ceramic material and components. The core product-Aluminum Nitride Substrates(AlN) is listed on the catalog of the Key Industries, Products and Technologies the Development of Which Is Encouraged by the State. It has financial support from Innovation Fund and belongs to the Key Projects of National Torch Program. Because of AlN’s high thermal conductivity, high electric insulation and low dielectric constant, it is widely used as package template and themal-module board in the industries of LED, large scale integrated circuit, semiconductor circuit and high power devices.）

氮化铝陶瓷板作为电路元件及互连线承载体，广泛应用于事和空间技术通讯、计算机、仪器仪表、电力电子设备、汽车、日用家电、办公自动化等各个领域。如LED照明电路、模块、晶闸管散热、大功率模块电路、可控硅整流器、大功率晶体管、半导体激光器、固体继电器、开关电源、大功率集成电路及封装等要求绝缘又高散热的大功率器件上。